机译:本征层宽度对基于p-i-n GaN的雪崩光电二极管中的带间隧穿电流的影响
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;
机译:乘法层对IngaAs / InP雪崩光电二极管暗电流分量的影响
机译:使用离子注入隔离制造的MOCVD生长的高增益和低暗电流GaN P-I-N紫外雪崩光电二极管
机译:GaN基雪崩光电二极管的暗电流和光响应特性对极化电荷密度的依赖性
机译:具有倍增层宽度的雪崩增益分析及其在浮动保护环雪崩光电二极管中的应用
机译:高速光电探测器的设计,分析和宏观建模,强调了联合打开效应雪崩光电二极管和横向p-i-n光电二极管。
机译:GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
机译:在p-i-n石墨烯纳米带中在室温下的高磁阻 由于带间隧道效应