机译:垂直双注入4H-SiC MOSFET在高温下的沟道迁移率和导通电阻
Ioffe Physico-Technical Institute of Russian Academy of Sciences, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA;
Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA;
Ioffe Physico-Technical Institute of Russian Academy of Sciences, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia;
Ioffe Physico-Technical Institute of Russian Academy of Sciences, 26 Politekhnicheskaya, 194021 St. Petersburg, Russia;
CREE Inc., 4600 Silicon Dr., Durham NC 27703, USA;
CREE Inc., 4600 Silicon Dr., Durham NC 27703, USA;
CREE Inc., 4600 Silicon Dr., Durham NC 27703, USA;
CREE Inc., 4600 Silicon Dr., Durham NC 27703, USA;
机译:高迁移率4H-SiC MOSFET在高温下稳定运行
机译:N_2O气氛中热氧化之前通过砷和磷注入的高沟道迁移率4H-SiC MOSFET
机译:沟道注入4H-SiC MOSFET中界面特性与电子迁移率的相关性
机译:通道注入的4H-SiC MOSFET中界面特性与电子移动性的相关性
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:4H-SIC垂直双植入MOSFET(DIMOS)的新香料Macromodel