机译:200 GHz SiGe HBT高频噪声参数的分析模型
Micro and Nano Technologies Group, Department of Electronic Engineering, Universitat Politecnica de Catalunya, Campus Nord, Modul C4, Calle Jordi Girona 1, Barcelona 08034, Spain;
rnDresden University of Technology, Dresden 01062, Germany Center for Physical Sciences and Technology, Semiconductor Physics Institute, Vilnius 01108,Lithuania;
rnDresden University of Technology, Dresden 01062, Germany Department of Electronics and Computer Engineering, University of California San Diego, La Jolla,CA 92093-0407, USA;
机译:SiGe HBT的高频散射参数和噪声表征的简单四端口寄生去嵌入方法
机译:毫米波原位调谐器:提取整个130–170 GHz范围内SiGe HBT噪声参数的有效解决方案
机译:SiGe HBT噪声参数在70–170 GHz范围内的表征
机译:横向缩放对200GHz SiGe的低频噪声影响:C HBTS
机译:SiGe HBT和RF CMOS的高频噪声建模和微观噪声仿真。
机译:SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
机译:80 GHz SiGe HBT技术中具有低相位噪声的64至81 GHz PLL