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机译:GaAs基中具有InGaAs量子阱的晶体管激光器的估计阈值基极电流和光功率输出
Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road,Kolkata 700 009, India,Centre for Research in Nanoscience and Nanotechnology, University of Calcutta, India;
Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road,Kolkata 700 009, India;
Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road,Kolkata 700 009, India;
机译:亚毫安级阈值电流(0摄氏度时为0.62 mA)和高输出功率(220 mW),1.5μm拉伸应变InGaAs单量子阱激光器
机译:基于InGaAs / GaAs量子阱系统的半导体激光器中阈值电流的压力和温度依赖性
机译:低阈值电流,高效1.3- / splμm/ m波长,不含铝的InGaAsN基量子阱激光器
机译:对称和非对称多量子阱晶体管激光器的阈值基本电流和光功率输出
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
机译:分子束外延生长的亚毫安级阈值电流伪态InGaAs / AlGaAs埋藏异质结构量子阱激光器