机译:子带电子温度对中红外量子级联激光器输出特性影响的数值研究
Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Key Disciplines Lab of Novel Micro-nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044, People's Republic of China;
Key Laboratory of Optoelectronic Technology and Systems, Ministry of Education, Key Disciplines Lab of Novel Micro-nano Devices and System Technology, and School of Optoelectronics Engineering, Chongqing University, Shapingba, Chongqing 400044, People's Republic of China;
Department of Physics and Engineering Physics, Stevens Institute of Technology, Castle Point on Hudson, Hoboken, NJ 07030, USA;
Department of Physics and Engineering Physics, Stevens Institute of Technology, Castle Point on Hudson, Hoboken, NJ 07030, USA;
Department of Physics and Engineering Physics, Stevens Institute of Technology, Castle Point on Hudson, Hoboken, NJ 07030, USA;
机译:具有不同导带偏移的太赫兹量子级联激光器中的子带电子温度和电子晶格能量弛豫
机译:中红外量子级联激光器电子传输建模的数值有效密度矩阵技术
机译:THz量子级联激光器中子带电子温度的测量和粒子数反转
机译:子带电子温度与THz量子级联激光器的内部量子效率的相关性
机译:III-V半导体量子阱系统:砷化镓二维孔系统的物理原理和中红外量子级联激光器的工程设计。
机译:基于高效中红外量子级联激光器的室温连续波单片可调太赫兹源
机译:中红外量子级联激光器电子传输建模的数值有效密度矩阵技术