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Numerically efficient density-matrix technique for modeling electronic transport in mid-infrared quantum cascade lasers

机译:中红外量子级联激光器电子传输建模的数值有效密度矩阵技术

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We present a numerically efficient density-matrix model applicable to mid-infrared quantum cascade lasers. The model is based on a Markovian master equation for the density matrix that includes in-plane dynamics, preserves positivity of the density matrix and does not rely on phenomenologically introduced dephasing times. Nonparabolicity in the band structure is accounted for with a three-band k center dot p model, which includes the conduction, light-hole, and spin-orbit split-off bands. We compare the model to experimental results for QCLs based on lattice-matched as well as strain-balanced InGaAs/InAlAs heterostructures grown on InP. We find that our density-matrix model is in quantitative agreement with experiment up to threshold and is capable of reproducing results obtained using the more computationally expensive nonequilibrium Green's function formalism. We compare our density-matrix model to a semiclassical model where off-diagonal elements of the density matrix are ignored. We find that the semiclassical model overestimates the threshold current density by 29% for a 8.5-mu m-QCL based on a lattice-matched heterostructure and 40% for a 4.6-mu m-QCL based on a strain-balanced heterostructure, demonstrating the need to include off-diagonal density-matrix elements for accurate description of mid-infrared QCLs.
机译:我们介绍了一种适用于中红外量子级联激光器的数值有效的密度 - 矩阵模型。该模型基于包括面内动态的密度矩阵的Markovian主方程,保留密度矩阵的阳性,并且不依赖于现象学过的去除时间。频带结构中的非协调性被占用三带K中心点P型号,其包括导通,光孔和旋转轨道分流带。我们将模型与基于晶格匹配的QCLS的实验结果进行比较,以及在INP上生长的应变平衡的Ingaas / Inalas异质结构。我们发现我们的密度 - 矩阵模型与实验相吻合阈值,并且能够使用更昂贵的昂贵的非QuibiBribium的功能形式主义来再现获得的结果。我们将密度 - 矩阵模型与密度矩阵的非对角线元素忽略的半导体模型进行比较。我们发现,基于晶格匹配的异质结构,半导体模型将阈值电流密度高估为8.5-mu m-Qcl,基于应变平衡异质结构的4.6-mu m-qcl,40%的40%。需要包括截止对角线密度 - 矩阵元素,以便准确描述中红外QCLS。

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