Optical fingerprints of Y2 ordering in Ⅲ-Ⅴ ternary semiconductor alloys

摘要

In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin-orbit splitting and band gap for Al_xGa_(1-x)As, Ga_xIn_(1-x)As, Ga_xIn_(1-x)P, GaAs_xSb_(1-x)and InP_xSb_(1-x) using first-principles calculations. These values and the valence band splittings E_(12), E_(13) for these materials are provided as a function of the ordering parameter η. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.