首页> 外文期刊>Semiconductor science and technology >Enhancement of ZnO nanorod arrays-based inverted type hybrid organic solar cell using spin-coated Eosin-Y
【24h】

Enhancement of ZnO nanorod arrays-based inverted type hybrid organic solar cell using spin-coated Eosin-Y

机译:旋涂曙红-Y增强基于ZnO纳米棒阵列的倒置型混合有机太阳能电池

获取原文
获取原文并翻译 | 示例
       

摘要

This paper reports the effect of Eosin-Y coating concentration on the performance of inverted type hybrid organic solar cell based on ZnO nanorod arrays and poly(3-hexylthiophene-2,5-diyl) (P3HT). The Eosin-Y solution with concentrations of 0.05, 0.2, 2.0 and 5.0 mM was spin-coated onto the ZnO nanorod arrays grown on the fluorine-doped tin oxide glass substrate. The P3HT film was then spin-coated onto Eosin-Y-coated ZnO nanorod arrays, followed by deposition of silver (Ag) as anode using magnetron sputtering technique. The short circuit current density increased with the Eosin-Y coating concentration up to 0.2 mM, after which it started to decrease, mainly due to the aggregation of Eosin-Y which reduced the charge extraction from P3HT to ZnO. Meanwhile, the open circuit voltage increased with the Eosin-Y coating concentration, indicating reduced back charge recombination of electron on the ZnO and hole on the P3HT, as well as reduced leakage current through the direct contact between the ZnO nanorods and the Ag metal contact. The power conversion efficiency of the device with the optimum coating concentration was approximately eight times higher than that without Eosin-Y modification.
机译:本文报道了曙红-Y涂层浓度对基于ZnO纳米棒阵列和聚(3-己基噻吩-2,5-二基)(P3HT)的倒置型混合有机太阳能电池性能的影响。将浓度为0.05、0.2、2.0和5.0 mM的曙红-Y溶液旋涂到生长在掺氟氧化锡玻璃基板上的ZnO纳米棒阵列上。然后将P3HT膜旋涂到曙红-Y涂层的ZnO纳米棒阵列上,然后使用磁控溅射技术沉积作为阳极的银(Ag)。短路电流密度随着Eosin-Y涂层浓度达到0.2 mM而增加,此后开始减小,这主要是由于Eosin-Y的聚集减少了从P3HT到ZnO的电荷提取。同时,开路电压随曙红Y涂层浓度的增加而增加,表明ZnO上的电子和P3HT上的空穴的反电荷复合减少,并且通过ZnO纳米棒和Ag金属触点之间的直接接触而减少的泄漏电流。 。具有最佳涂层浓度的器件的功率转换效率大约是未经Eosin-Y修饰的器件的功率转换效率的八倍。

著录项

  • 来源
    《Semiconductor science and technology》 |2013年第4期|9.1-9.6|共6页
  • 作者单位

    School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia,43600 UKM Bangi, Selangor, Malaysia;

    School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia,43600 UKM Bangi, Selangor, Malaysia;

    School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia,43600 UKM Bangi, Selangor, Malaysia;

    Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, Malaysia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 01:30:46

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号