Rectifying effect through the interface of SrTiO_(3-δ)/GaAs heterojunctions

摘要

Oxides-semiconductor junctions have attracted great attention and exhibited promising potential in integrated devices in which the passing current is controlled by applying voltage. It is found that an oxygen-deficient SrTiO(3-δ)/p-GaAs junction displays an obvious rectifying effect. The SrTiO_(3-δ) thin film is in the anomalous in-plain compressive strain, as confirmed by structural characterization. Investigations on the current-voltage curve show that the current decreases with the increasing temperature at the reverse bias, which suggests that the rectifying behavior may be attributed to the strain-assisted tunneling mechanism. The effect of strain or film thickness on the transport property is also discussed.