首页> 外文期刊>Semiconductor science and technology >If it's pinched it's a memristor
【24h】

If it's pinched it's a memristor

机译:如果被挤压,那就是忆阻器

获取原文
获取原文并翻译 | 示例
           

摘要

This paper presents an in-depth review of the memristor from a rigorous circuit-theoretic perspective, independent of the material the device is made of. From an experimental perspective, a memristor is best defined as any two-terminal device that exhibits a pinched hysteresis loop in the voltage-current plane when driven by any periodic voltage or current signal that elicits a periodic response of the same frequency. This definition greatly broadens the scope of memristive devices to encompass even non-semiconductor devices, both organic and inorganic, from many unrelated disciplines, including biology, botany, brain science, etc. For pedagogical reasons, the broad terrain of memristors is partitioned into three classes of increasing generality, dubbed Ideal Memristors, Generic Memristors, and Extended Memristors. Each class is distinguished from the others via unique fingerprints and signatures. This paper clarifies many confusing issues, such as non-volatility, dc Ⅴ-Ⅰ curves, high-frequency v-i curves, local activity, as well as nonlinear dynamical and bifurcation phenomena that are the hallmarks of memristive devices. Above all, this paper addresses several fundamental issues and questions that many memristor researchers do not comprehend but are afraid to ask.
机译:本文从严格的电路理论角度对忆阻器进行了深入的回顾,而与器件的材料无关。从实验的角度来看,忆阻器最好定义为当受到引起相同频率的周期性响应的任何周期性电压或电流信号驱动时,在电压-电流平面中表现出收缩磁滞回线的任何两端器件。此定义极大地扩展了忆阻器件的范围,甚至涵盖了许多无关学科(包括生物学,植物学,脑科学等)的有机和无机非半导体器件。出于教学的原因,忆阻器的广阔地域被划分为三个越来越多的通用性,称为理想忆阻器,通用忆阻器和扩展忆阻器。每个类别都通过独特的指纹和签名与其他类别区分开。本文阐明了许多令人困惑的问题,例如非易失性,dcⅤ-Ⅰ曲线,高频v-i曲线,局部活动以及非线性动态和分叉现象,这些都是忆阻器件的特征。最重要的是,本文解决了许多忆阻器研究人员不理解但害怕提出的几个基本问​​题。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号