首页> 外文期刊>Semiconductor science and technology >Comment on 'If it's pinched it's a memristor'
【24h】

Comment on 'If it's pinched it's a memristor'

机译:评论“如果被挤压,这是一个忆阻器”

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In his paper 'If it's pinched it's a memristor' (Chua 2014 Semicond. Sci. Technol. 29 104001) L Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a correspondence between the hysteresis curves of different types of memory elements. This leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin. The purpose of this comment is to correct the wrong statements in Chua's paper, as well as to highlight some other inconsistencies in his reasoning. We also provide experimental evidence of a memcapacitive device showing non-pinched hysteresis.
机译:L Chua在他的论文“如果受压,就是忆阻器”(Chua 2014 Semicond。Sci。Technol。29 104001)声称将忆阻器的概念扩展到所有显示出滞环在原点处受阻的两端电阻器件。他还指出,可以通过简单地替换忆阻器关系中的符号来定义忆阻器和忆阻器,因此,在不同类型的存储元件的磁滞曲线之间应该存在对应关系。这导致作者得出一个错误的结论,即任何介电容设备的电荷-电压曲线应在原点处捏住。这篇评论的目的是纠正蔡先生在论文中的错误陈述,并强调他的推理中的其他一些不一致之处。我们还提供了显示非捏滞现象的介电容设备的实验证据。

著录项

  • 来源
    《Semiconductor science and technology》 |2019年第9期|098001.1-098001.3|共3页
  • 作者

    Pershin Y. V.; Di Ventra M.;

  • 作者单位

    Univ South Carolina Dept Phys & Astron Columbia SC 29208 USA;

    Univ Calif San Diego Dept Phys La Jolla CA 92093 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号