机译:建立欧姆接触与n-GaN纳米线的接触电阻率的上限
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305, USA;
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305, USA;
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305, USA;
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305, USA;
gallium nitride; nanowires; contact resistivity;
机译:n-GaN和AlGaN / GaN外延层上退火的Ti / Al / Mo / Au欧姆接触的反应动力学和接触形成机理的差异
机译:评论“合金化欧姆接触到n-GaN的接触机理和设计原理” [J.应用物理95,7940(2004)]
机译:对“关于“合金欧姆接触到n-GaN的接触机理和设计原理”的评论” [J.应用物理95,7940(2004)]
机译:AU / Ni / Ti / Ta / N-GaN欧姆触点的TEM研究和接触电阻
机译:通过固相反应开发与n-Ga(或Al)(0.5)In(0.5)P的不尖峰欧姆接触以及对n-GaAs进行低温处理的欧姆接触
机译:优化p-GaAs纳米线的欧姆接触
机译:微波辐射对欧姆接触n-GaN和n-AlN的I-V曲线和接触电阻的影响
机译:低温电阻欧姆接触中等掺杂的n-Gaas,低温处理