Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

摘要

Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward Ⅰ-Ⅴ characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q ＜ V ＜ 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V ＞ 0.2 V. The reverse Ⅰ-Ⅴ characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.