机译:等离子体辅助分子束外延生长具有均质晶格匹配InAlN势垒的GaN基高电子迁移率晶体管结构
Materials Department, University of California, Santa Barbara, CA 93106, USA;
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA;
Materials Department, University of California, Santa Barbara, CA 93106, USA;
Materials Department, University of California, Santa Barbara, CA 93106, USA;
Materials Department, University of California, Santa Barbara, CA 93106, USA;
Materials Department, University of California, Santa Barbara, CA 93106, USA;
Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA;
Materials Department, University of California, Santa Barbara, CA 93106, USA;
molecular beam epitaxy; gallium nitride; indium aluminum nitride; transistors; scattering;
机译:N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构,通过等离子体辅助分子束外延在邻近衬底上生长
机译:等离子体辅助分子束外延生长的InAlN / GaN异质结构场效应晶体管
机译:生长温度对等离子体辅助分子束外延实现晶格匹配和应变的InAlN / GaN异质结构的重要性
机译:等离子体辅助分子束外延技术的N面GaN基微波金属绝缘体-半导体高电子迁移率晶体管
机译:分子束外延生长对金属极性III族氮化物高电子迁移率晶体管结构的优化生长。
机译:N极InAlN势垒高电子迁移率晶体管的等离子体辅助分子束外延
机译:等离子体辅助分子束外延生长的晶格匹配InAlN / GaN Bragg反射镜的生长和表征