Effect of post-growth anneal on the photoluminescence properties of GaSbBi

摘要

The effect of post-growth anneal on the photoluminescence (PL) properties of GaSbBi layers, grown by liquid phase epitaxy, is investigated. It is observed that annealing for temperatures up to 650 ℃ increases the PL intensity and decreases the PL peak width indicating an improvement in the crystalline quality of the layer. A second peak at 0.72 eV, observed in GaSbBi only, is totally removed by annealing, suggesting that the peak is related to emission from Bi-related antisite defects. A red shift of up to 9 meV is also observed for the band edge emission peak as a result of anneal.