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机译:通过高温后生长退火抑制多层InAs / GaAs耦合量子点中光致发光峰蓝移的方法
Center for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;
rnCenter for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;
rnCenter for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;
rnCenter for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India Laboratory of Solid-State Physics and Magnetism, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium;
rnCenter for Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;
A. Nanostructures; A. Semiconductors; B. Epitaxial growth; C. Electron microscopy; D. Optical properties;
机译:四元合金(InAlGaAs)封顶的InAs / GaAs多层量子点异质结构的热稳定性,其生长速率,势垒厚度,种子量子点单层覆盖率和生长后退火均会发生变化
机译:进行生长后热退火的多层InAs / GaAs量子点的理论优化,以定制超过1.3μm的光致发光
机译:快速热退火提高应变耦合的InAs / GaAs量子点红外光电探测器的峰值检测率和工作温度
机译:经受高温快速热退火的应变耦合多层InAs / GaAs量子点异质结构中峰值发射波长的稳定性
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:温度对在图案化GaAs上生长的单个InAs量子点的光致发光特性的影响
机译:错误到:量子狭窄的insumsum圆点光致发光与Algaas / GaAs二维电子气体的光致发光的温度依赖性