机译:II型GaAs / GaAlAs短周期超晶格中负电折射的证据
VI Syst GmbH, D-10623 Berlin, Germany|ITMO Univ, St Petersburg 197101, Russia|Ioffe Inst, St Petersburg 194021, Russia;
VI Syst GmbH, D-10623 Berlin, Germany|ITMO Univ, St Petersburg 197101, Russia|St Petersburg Acad Univ, St Petersburg 195220, Russia|Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 195220, Russia;
ITMO Univ, St Petersburg 197101, Russia|Ioffe Inst, St Petersburg 194021, Russia|Connector Opt LLC, St Petersburg 194292, Russia;
Ioffe Inst, St Petersburg 194021, Russia;
ITMO Univ, St Petersburg 197101, Russia|Ioffe Inst, St Petersburg 194021, Russia|Connector Opt LLC, St Petersburg 194292, Russia;
ITMO Univ, St Petersburg 197101, Russia|Ioffe Inst, St Petersburg 194021, Russia|Connector Opt LLC, St Petersburg 194292, Russia;
Ioffe Inst, St Petersburg 194021, Russia|St Petersburg Acad Univ, St Petersburg 195220, Russia|Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 195220, Russia;
Ioffe Inst, St Petersburg 194021, Russia|St Petersburg Acad Univ, St Petersburg 195220, Russia|Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 195220, Russia;
Ioffe Inst, St Petersburg 194021, Russia;
Ioffe Inst, St Petersburg 194021, Russia;
negative electrorefraction; type-II short-period superlattice; quantum confined Stark Effect;
机译:短周期II型GaAs / AlAs超晶格中X-L微型带形成的证据
机译:II型GaAs-AlAs超晶格中强声子辅助共振间隔上电子转移的证据
机译:GaAs / AlAs II型超晶格中激子-比西森体系的量子统计证据-艺术。没有。 195316
机译:短时间内in in in II Supertrice中光发液电子空穴对的空间分离产生的周期电场的证据
机译:InAs / GaAs短周期应变层超晶格的分子束外延生长。
机译:具有飞秒光纤激光器应用的短周期超晶格封盖结构的1550 nm InAs / GaAs量子点可饱和吸收镜的开发
机译:运输散射时间和量子寿命对调制掺杂单个GaAs量子井中的二维电子气密度与ALAS / GaAs短期超晶格屏障
机译:分子束外延生长在Gaas衬底上的(Inas)m(Gaas)n短周期超晶格层的研究