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Effective equations for the precession dynamics of electron spins and electron-impurity correlations in diluted magnetic semiconductors

机译:稀磁半导体中电子自旋进动动力学和电子杂质相关性的有效方程式

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摘要

Starting from a quantum kinetic theory for the spin dynamics in diluted magnetic semiconductors, we derive simplified equations that effectively describe the spin transfer between carriers and magnetic impurities for an arbitrary initial impurity magnetization. Taking the Markov limit of these effective equations, we obtain good quantitative agreement with the full quantum kinetic theory for the spin dynamics in bulk systems at high magnetic doping. In contrast, the standard rate description where the carrier-dopant interaction is treated according to Fermi's golden rule, which involves the assumption of a short memory as well as a perturbative argument, has been shown previously to fail if the impurity magnetization is non-zero. The Markov limit of the effective equations is derived, assuming only a short memory, while higher order terms are still accounted for. These higher order terms represent the precession of the carrier-dopant correlations in the effective magnetic field due to the impurity spins. Numerical calculations show that the Markov limit of our effective equations reproduces the results of the full quantum kinetic theory very well. Furthermore, this limit allows for analytical solutions and for a physically transparent interpretation.
机译:从用于稀磁半导体中自旋动力学的量子动力学理论出发,我们得出简化的方程式,该方程有效地描述了任意初始杂质磁化作用下载流子和磁性杂质之间的自旋转移。采取这些有效方程的马尔可夫极限,我们与高量子掺杂的整体系统中的自旋动力学的全量子动力学理论获得了良好的定量一致性。相反,如果杂质磁化强度不为零,则根据费米的黄金定律处理载流子-掺杂剂相互作用的标准速率描述以前就失败了,该速率描述涉及短记忆和微扰论的假设。 。假设仅短时记忆,则推导有效方程的马尔可夫极限,同时仍考虑高阶项。这些高阶项表示由于杂质自旋而在有效磁场中载流子-掺杂剂相关性的进动。数值计算表明,我们有效方程的马尔可夫极限很好地再现了全量子动力学理论的结果。此外,该限制允许分析解决方案和物理透明的解释。

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