机译:GaN基HEMT的非热合金欧姆接触脉冲激光退火工艺
Natl Chiao Tung Univ, Dept Electrophys, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Electroopt Engn, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan;
Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Electroopt Engn, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan;
Natl Nano Device Labs, 26,Prosper Rd 1, Hsinchu 30078, Taiwan;
Epistar, 22 Keya Rd,Cent Taiwan Sci Pk, Taichung 42881, Taiwan;
Natl Chiao Tung Univ, Dept Electrophys, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Dept Elect Engn, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Acad Sinica, Res Ctr Appl Sci, 128 Acad Rd,Sect 2, Taipei 11529, Taiwan;
Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Natl Chiao Tung Univ, Inst Electroopt Engn, 1001 Ta Hsueh Rd, Hsinchu 30010, Taiwan|Natl Nano Device Labs, 26,Prosper Rd 1, Hsinchu 30078, Taiwan;
GaN; HEMTs; pulse laser annealing; ion implantation;
机译:用于GaN HEMT的具有欧姆凹槽和低温退火的通用低电阻欧姆接触工艺
机译:4H-SIC电源装置通过脉冲激光退火和快速热退火的欧姆接触
机译:四元In_(0.04)Al_(0.65)Ga_(0.31)N / GaN HEMT中的预金属化退火工艺改善了欧姆接触
机译:4H-SIC电源装置通过脉冲激光退火和快速热退火的欧姆接触
机译:通过固相反应开发与n-Ga(或Al)(0.5)In(0.5)P的不尖峰欧姆接触以及对n-GaAs进行低温处理的欧姆接触
机译:在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
机译:采用非退火欧姆接触工艺,具有430GHz fT的50nm T栅极晶格匹配InP HEMT