机译:Al2O3-InAlN-GaN MOSHEMT中的动态阈值电压和陡峭的亚阈值摆幅的物理学
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China|Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China;
Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China;
Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;
InAlN-GaN MOSHEMT; dynamic threshold voltage; interface traps; steep subthreshold swing; high temperature;
机译:量子限制对双栅极隧道FET中的栅极阈值电压和亚阈值摆幅的影响
机译:通过双顶栅电压调制,具有p(+)-i-n(+)纳米线的可弯曲反馈场效应晶体管的陡峭亚阈值摆幅n和p通道操作
机译:在对准阵列碳纳米管场效应晶体管中的阵列非均匀性,阈值电压和子阈值摆动降解之间的链接
机译:SiC衬底上的Al0.83In0.17N / AlN / GaN MOS-HEMT中“负”电容且陡峭于40mV / decade亚阈值摆幅的实验观察和物理学
机译:陡峭的亚阈值摆晶体管
机译:重新定义AgInSbTe器件的时间分辨陡峭阈值切换动力学揭示的相变存储器的速度极限
机译:具有多个阈值电压的强大的动态节点低压摆幅Domino逻辑
机译:使用动态阈值金属氧化物半导体(DTmOs)和传输门逻辑的亚阈值数字库。