机译:快速热退火后GaAsSb合金的光学特性
South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China|Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China;
Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China;
South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China;
photoluminescence; localized state; exciton; exciton-phonon interaction; rapid thermal annealing;
机译:快速热退火对固态源分子束外延生长的GaNxP1-x合金光学性能的影响
机译:快速热退火对光纤上碳涂层特性的影响
机译:用于LCD制造的快速热退火系统的光学和传热特性的数值研究
机译:快速热退火对InP上InAlAs / GaAsSb HIGFET外延层的结构完整性的影响
机译:快速热退火欧姆触点与砷化镓的比较电特性。
机译:通过硅衬底上溅射的Ge / Sn / Ge层的快速热退火合成Ge1-xSnx合金薄膜
机译:N +离子注入和快速热退火的Si(100)晶片的光学特性,通过光谱椭圆偏振法研究
机译:快速热退火处理的假晶alGaas / InGaas / Gaas调制掺杂结构的光学和电学表征