机译:Ge1-xSnx / Ge1-x-ySixSny异质结构中能带排列的Ge1-x-ySixSny层晶格常数的控制
Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan;
Nagoya Univ, Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan;
Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan;
Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan;
Nagoya Univ, Grad Sch Engn, Dept Mat Phys, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan|Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan;
Nagoya Univ, Inst Mat & Syst Sustainabil, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan;
germanium silicon tin; band alignment; Group-IV semiconductor; strain relaxation; heterostructure;
机译:GE1-X-YSIXSNY / GE1-XSNX / GE1-X-YSIXSNY双异质结构的形成与表征,具有应变控制的GE(1-X-Y)S(I)XSN(Y)层
机译:晶格匹配的Ge_(1-x-y)Si_xSn_y / Ge异质结构中Ⅰ型能带排列的实验观察
机译:Mg_yZn_(1-y)S熔覆层与Cd_xZn_(1-x)S / ZnS量子阱之间的晶格失配引起的应变对Cd_xZn_(1-x)S / ZnS / ZnS / Mg_yZn_(1-的有效带隙能的影响y)S分离约束异质结构
机译:稀土和过渡金属(Re / Tm)复合氧化物中界面能带排列和介电常数的独立控制
机译:使用弹道电子发射显微镜在金属/分子层/半导体和金属/量子点界面进行能带对准。
机译:van der waals异质结构:PTCDA-MOLAYER MOS2接口的I型能水平对准促进共振能量传递和发光增强(ADV。12/2021)
机译:Ge1-x-YSixSny合金带隙的成分依赖性
机译:Ga(as,p)应变层超晶格:具有可独立调节的带Gap和晶格常数的三元半导体