Fabrication of resistive switching memory based on solution processed PMMA-HfOx blended thin films

摘要

In this study, we developed PMMA-HfOx blended resistive random access memory (ReRAM) devices using solution processing to overcome the drawbacks of the individual organic and inorganic materials. Resistive switching behaviors of solution-processed PMMA, PMMA-HfOx, and HfOx film-based ReRAM devices were investigated. The poor electrical characteristic of PMMA and brittle mechanical properties of HfOx can be improved by blending PMMA and HfOx together. The PMMA-HfOx blended ReRAM device exhibited a larger memory window, stable endurance and retention, a lower operation power, and better set/reset voltage distributions. Furthermore, these new systems featured multilevel conduction states at different reset bias for non-volatile multilevel memory applications. Therefore, solution-processed PMMA-HfOx blended films are a promising material for non-volatile memory devices on flexible or wearable electronic systems.