Photoelectric properties of polycrystalline Cd_xHg_1-xTe films grown on alternative substrates

摘要

The photoelectric and electric properties and structure of polycrystalline Cd_xHg_1-xTe films grown on Al_2O_3(x = 0.28)and GaAs(x = 0.80) substrates are studied. The films obtained, having a high photosensitivity in particular at room temperature, show promise for infrared optoelectronics. A comprehensive investigation of the photoconductivity spectra, lux-ampere Characteristics and temperature dependences of the photoelectric and electrical Characteristics have established the significant influence of electrically active grain Boundaries on the photoelectric parameters.