Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors

摘要

This paper presents a procedure to improve the algorithm of Sangiorgi, Ricco and Venturi for the calculation of the time of flight in Monte Carlo simulations. The method is used to efficiently optimize the step function in which the total scattering probability is discretized. The optimization criterion suggested in this work can reduce the self scattering events to less than 30% in a fairly wide range of temperatures, applied fields and doping levels. Different examples are presented to illustrate the advantages of the method.