机译:使用Zn(Ⅱ)卟啉自组装单层的Al_(0.5)Ga_(0.5)Nβ(0.5)Nβ的有机钝化,以改善太阳盲光电探测器性能
Indian Inst Technol Delhi Dept Phys New Delhi 110016 India;
Indian Inst Technol Ctr Excellence Nanoelect Mumbai 400076 Maharashtra India;
Indian Inst Technol Dept Chem Mumbai 400076 Maharashtra India;
King Abdullah Univ Sci & Technol Adv Semicond Lab Thuwal 239556900 Saudi Arabia;
King Abdullah Univ Sci & Technol Adv Semicond Lab Thuwal 239556900 Saudi Arabia;
Indian Inst Technol Ctr Excellence Nanoelect Mumbai 400076 Maharashtra India|Indian Inst Technol Delhi Dept Elect Engn New Delhi 110016 India;
Indian Inst Technol Delhi Dept Phys New Delhi 110016 India|Indian Inst Technol Delhi Nanoscale Res Facil New Delhi 110016 India;
surface states; passivation; self-assembled monolayer; solar-blind photodetector; responsivity; dark current; temporal response;
机译:高性能百叶窗Al_(0.6)Ga_(0.4)N / Al_(0.5)Ga_(0.5)N MSM型光电探测器
机译:分子束外延生长的GaN / Al_(0.5)Ga_(0.5)N多量子阱的蓝光发射,其扰动层为Al_(0.5)Ga_(0.5)N单层
机译:陷阱能级对Al_(0.6)Ga_(0.4)N / Al_(0.5)Ga_(0.5)N金属-半导体-金属UV光电探测器的影响
机译:p型Al_(0.5)Ga_(0.5)AS / GaAs / Al_(0.5)Ga_(0.5)中的负极和持续的正光电导性
机译:具有增强的低频微波吸收性能的两步溶剂热合成(Zn0.5Co0.5Fe2O4 / Mn0.5Ni0.5Fe2O4)@ C-MWCNTs杂化物
机译:使用Zn(II)卟啉自组装单层的Al0.5Ga0.5N外膜的有机钝化,以改善太阳盲光电探测器性能