机译:欧姆金属/ hg_(1-x)cd_xte(x≈0.3)触点
NAS Ukraine V Lashkaryov Inst Semicond Phys 41 Pr Nauky UA-03028 Kiev Ukraine;
NAS Ukraine V Lashkaryov Inst Semicond Phys 41 Pr Nauky UA-03028 Kiev Ukraine;
NAS Ukraine V Lashkaryov Inst Semicond Phys 41 Pr Nauky UA-03028 Kiev Ukraine;
NAS Ukraine V Lashkaryov Inst Semicond Phys 41 Pr Nauky UA-03028 Kiev Ukraine;
NAS Ukraine V Lashkaryov Inst Semicond Phys 41 Pr Nauky UA-03028 Kiev Ukraine;
NAS Ukraine V Lashkaryov Inst Semicond Phys 41 Pr Nauky UA-03028 Kiev Ukraine;
SMI Lab Ltd 50-52 Primorska Str UA-27504 Svitlovodsk Ukraine;
John Paul II Catholic Univ Lublin Off Campus Fac Engn & Tech Sci Stalowa Wola 3a Kwiatkowskiego Str PL-37450 Stalowa Wola Poland|Ivan Franko Drogobych State Pedag Univ Dept Technol & Profess Educ 24 Ivan Franko Str UA-82100 Drogobych Ukraine;
M Curie Sklodowska Univ Inst Phys Plac Marii Curie Sklodowskiej 1 PL-20031 Lublin Poland;
RAS Rzanov Inst Semicond Phys SB 13 Lavrentyev Aven Novosibirsk 630090 Russia;
HgCdTe; photovoltaic detector; energy-dispersive x-ray analysis; ohmic contact; contact resistance;
机译:在批量Hg_(1-x)cd_xte合金和中红外2d hg_(1-x)cd_xte / cdte单量子阱激光器上的非分解效应
机译:p型Hg_(1-x)Cd_xTe上化学镀金触点的电气特性
机译:Hg_(1-x)cd_xte中的电子迁移率(x = 0.22和0.3):实验和理论结果之间的比较
机译:半立体的变形电位; HGTE / HG_(1-X)CD_XTE Supertrices中的IntersubBand转换
机译:铟过渡金属与n型砷化镓的欧姆接触的热力学研究,以及季镓-铟-(过渡或贵金属)-砷体系的热化学行为概述。
机译:超低接触电阻的黑色磷场效应晶体管中的掺锗金属欧姆接触
机译:通过在金属和P-GaN层之间添加SWCNT金属化层间来改善Au / Ni-Mg / p-GaN触点的欧姆特性