机译:扩散控制界面氧化技术的GaN基MOS异质结构的界面性质与带偏移研究
Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China|Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Xian 710071 Peoples R China|Univ Bristol Ctr Device Thermog & Reliabil Sch Phys Bristol BS8 1TL Avon England;
Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Xian 710071 Peoples R China|Xidian Univ Sch Microelect Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Xian 710071 Peoples R China|Xidian Univ Sch Microelect Xian 710071 Peoples R China;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Xian 710071 Peoples R China|Xidian Univ Sch Microelect Xian 710071 Peoples R China;
Xidian Univ Sch Adv Mat & Nanotechnol Xian 710071 Peoples R China|Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Xian 710071 Peoples R China;
Univ Bristol Ctr Device Thermog & Reliabil Sch Phys Bristol BS8 1TL Avon England;
Univ Bristol Ctr Device Thermog & Reliabil Sch Phys Bristol BS8 1TL Avon England;
Xidian Univ State Key Discipline Lab Wide Bandgap Semicond Te Xian 710071 Peoples R China|Xidian Univ Sch Microelect Xian 710071 Peoples R China;
GaN; metal-oxide-semiconductor; interface oxidation;
机译:扩散控制界面氧化技术的GaN的MOS异质结构的界面性质与带偏移研究
机译:势垒凹槽对GaN基常关和常开金属氧化物半导体异质结构场效应晶体管的输运和静电界面特性的影响
机译:GaN / Aln异质结中非极性,GA极和AL极界面带偏移的混合功能研究
机译:扩散控制界面氧化技术的高性能常关Al
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机译:X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
机译:界面间距,稳定性,带偏移和间距的研究 (001)srHfO3 / Gaas界面的电子特性:第一原理 计算