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On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells

机译:宽GaN / AlGaN极性量子阱中的本征斯托克斯位移

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The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room temperature contactless ER and photoluminescence (PL) spectra of polar GaN/AlGaN QWs with the effective-mass band structure calculations. We show that the emission from the ground state transition is observed in PL but the ER is dominated by transitions between excited states. This effect results from the polarization-induced built-in electric field in QW that breaks the selection rules that apply to square-like QWs, allowing many optical transitions which cannot be separately distinguished in the ER spectrum. We develop the guidelines for the identification of optical transitions observed in PL and ER spectra. We conclude that an intrinsic Stokes shift, i.e., a shift between emission and absorption, is present even for homogeneous GaN/AlGaN QWs with large width, where the electron-hole wavefunction overlap for the fundamental transition is weak.
机译:由于内置电场,即使对于均质结构,也很难解释极性量子阱(QW)的电调制反射率(ER)光谱。在这项工作中,我们将极性GaN / AlGaN QW的室温非接触ER和光致发光(PL)光谱与有效质量能带结构计算进行了比较。我们表明,在PL中观察到了基态跃迁的发射,但ER受激发态之间的跃迁支配。这种效应是由QW中极化感应的内置电场引起的,该电场打破了适用于正方形QW的选择规则,从而允许许多光学跃迁,这些跃迁无法在ER光谱中单独区分。我们开发了用于识别PL和ER光谱中观察到的光学跃迁的准则。我们得出结论,即使对于具有大宽度的均质GaN / AlGaN QW,也存在固有的斯托克斯位移,即发射和吸收之间的位移,其中基本空穴跃迁的电子-空穴波函数重叠很弱。

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