机译:高能(15MeV)质子辐照对垂直功率4H-SiC MOSFET的影响
Ioffe Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia;
St Petersburg State Polytech Univ, Dept Expt Phys, Polytekhnicheskaya 29, St Petersburg 195251, Russia;
Ioffe Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia;
Ioffe Inst, Polytekhnicheskaya 26, St Petersburg 194021, Russia;
Natl Res Univ Informat Technol Mech & Opt, St Petersburg 197101, Russia;
United Silicon Carbide Inc, 7 Deer Pk Dr,Suite E, Monmouth Jct, NJ 08852 USA;
silicon carbide; power MOSFETs; proton irradiation;
机译:高能(15MEV)质子辐射对垂直功率4H-SiC MOSFET的影响
机译:质子辐射对电力4H-SiC MOSFET的影响
机译:4H-SiC垂直三栅极功率MOSFET
机译:低质子辐照能量对氮氧化物栅极4H-SiC MOSFET的积极影响
机译:1.2 kV 4H-SiC平面栅极功率MOSFET的设计,分析和优化,用于改进的高频切换
机译:5 MeV质子辐射对氮化SiO2 / 4H-SiC MOS电容的影响及相关机制
机译:温度和尺寸在4H-SIC垂直功率MOSFET中的影响
机译:4H-sIC垂直D-mosfet的脉冲功率开关及器件表征