机译:氢对具有LPCVD-SiNx栅极电介质的AlGaN / GaN MISFET的影响
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Minist Ind & Informat Technol, Sci & Technol Reliabil Phys & Applicat Elect Comp, Elect Res Inst 5, Guangzhou 510610, Guangdong, Peoples R China;
Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China;
AlGaN/GaN MISFET; LPCVD-SiNx; hydrogen effect;
机译:常开双栅AlGaN / GaN MISFET,具有选择性区域凹陷式浮栅
机译:替代AlGaN / GaN MISFET中常规电介质的顺电层
机译:LPCVD-SiNx栅极电介质与凹栅E型GaN MIS-FET的集成:追求高性能,高稳定性和长TDDB寿命
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:用于GaN / AlGaN / GaN MOS HEMT的低温原子层沉积生长的Al2O3栅极电介质:沉积条件对界面态密度的影响
机译:中子辐照对alGaN / GaN HFET影响的原位栅极偏置相关研究