Silicon Photodiode with Very Small Sensitive Area

摘要

The silicon PN junction photodiode with very small sensitive area has been investigated. The device gets superhigh light current density J_(LS) counted by the sensitive area in the planar PN junction. The superhigh light current density is due to the light current transferred by the photogenerated minority carriers in the area around edges of the dopant diffused region. Then, we can determine the diffusion length of the photogenerated minority carriers in the substance by measuring the light current of the PN junction photodiode with very small sensitive area.