GOI for Fast Transistors, Photodetectors

摘要

Germanium on insulator (GOI or GeOI) is an interesting material for two reasons: It can be used for photode-tectors (germanium absorbs 850 nm wavelength light about 70x more efficiently than does silicon), and also to make high-speed transistors. Germanium-based materials allow electrons to flow faster through the material, potentially speeding transistor switching by 3-4x over silicon.