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Verification System Compresses Mask Production Cycle

机译:验证系统压缩了掩模生产周期

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As the technology and the industry progress from 65 to 45 nm architectures, fabs are increasingly finding one i 1 of the major challenges that they face is the work and time required to verify masks enhanced with optical proximity correction (OPC), which are being used in production more and more — including for some back-end layers. OPC techniques very efficiently use a variety of non-printing features to compensate for optical proximity effects; however, this also has the unfortunate effect of multiplying the complexity of the mask. What once was a minor issue at the 130 or 90 nm nodes has now become a major, costly manufacturing and development hurdle.
机译:随着技术和行业从65纳米架构发展到45纳米架构,晶圆厂正越来越多地发现其面临的主要挑战之一是验证使用光邻近校正(OPC)增强的掩模所需的工作和时间。在生产中越来越多-包括一些后端层。 OPC技术非常有效地使用各种非打印功能来补偿光学邻近效应。然而,这还具有使掩模的复杂度成倍增加的不幸效果。在130或90 nm节点上曾经是一个小问题,现在变成了主要的,昂贵的制造和开发障碍。

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