机译:VO_2中的同构金属-绝缘体过渡
Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA;
Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA;
POSTECH, Dept Mat & Sci, Pohang 37673, South Korea;
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea;
Boise State Univ, Dept Phys, Boise, ID 83725 USA;
Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA;
Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland;
Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA;
Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA;
Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA;
Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South Korea;
机译:VO_2接口,金属-绝缘体过渡隧道结和金属-绝缘体过渡开关的通断电阻
机译:金属-绝缘体过渡区附近的VO_2薄膜中的光学功能,带隙和高能电子跃迁的本征演化
机译:单斜晶VO_2的声子失稳和压力诱导的同构半导体-半金属跃迁
机译:VO_2薄膜的相分析及VO_2电触发金属-绝缘体转变的机理
机译:过渡金属氧化物中的金属绝缘体过渡和量子相
机译:金属-绝缘体转变附近外延应变抑制VO2中的结构相变
机译:无结构的一阶金属绝缘子过渡观察 VO_2中的相变