...
机译:金属-绝缘体过渡区附近的VO_2薄膜中的光学功能,带隙和高能电子跃迁的本征演化
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
机译:跨越金属-绝缘体转变的外延VO_2薄膜中局部功函数的演化
机译:沉积方法和工艺对钙钛矿CH_3NH_3Pbl_3薄膜的带隙,带间电子跃迁和光吸收的影响
机译:ALD制备的亚纳米20nm以下TiO
机译:VO_2薄膜的相分析及VO_2电触发金属-绝缘体转变的机理
机译:电子结构:带隙和固体氢中的绝缘体-金属跃迁。
机译:ALD制备的亚20纳米厚TiO2薄膜的光学常数和带隙演化及相变
机译:VO(2)膜中金属-绝缘体过渡区附近的光学功能,带隙和高能电子跃迁的本征演化