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Dependence of upper critical field and pairing strength on doping in cuprates

机译:上临界场和配对强度对铜酸盐掺杂的依赖性

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We have determined the upper critical field H-c2 as a function of hole concentration in bismuth-based cuprates by measuring the voltage induced by vortex flow in a driving temperature gradient (the Nernst effect), in magnetic fields up to 45 tesla. We found that H-c2 decreased steeply as doping increased, in both single and bilayer cuprates. This relationship implies that the Cooper pairing potential displays a trend opposite to that of the superfluid density versus doping. The coherence length of the pairs xi(0) closely tracks the gap measured by photoemission. We discuss implications for understanding the doping dependence of the critical temperature T-c0. [References: 22]
机译:通过在高达45特斯拉的磁场中测量由涡流在驱动温度梯度中引起的电压(能斯特效应),我们确定了基于铋的铜酸盐中空穴浓度的函数的上限临界场H-c2。我们发现在单层和双层铜酸盐中,H-c2随掺杂增加而急剧下降。这种关系意味着库珀配对势显示出与超流体密度与掺杂相反的趋势。对xi(0)的相干长度紧密跟踪通过光发射测量的间隙。我们讨论了理解临界温度T-c0的掺杂依赖性的含义。 [参考:22]

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