Growth, Characterization of Epitaxial Heterostructures of Ultrathin Bi_2Te_3 Nanoplates on Few-Layer MoS_2 Films

摘要

Ultrathin topological insulator Bi_2Te_3 nanoplates with well-defined orientations have been fabricated on few-layer MoS_2 films via van der Waals epitaxial growth. Electrostatic properties of the epitaxial heterostructures were systematically investigated by Kelvin probe force microscopy under ambient conditions. Experimental results demonstrate that charge exchange exists at the interface, resulting in doping to ultrathin Bi_2Te_3 nanoplates from few-layer MoS_2 substrate. These results may provide a route to investigate the electronic and spintronic properties of topological insulators.