Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation

摘要

In this article, we present contemporary research advancements on negative bias temperature instability (NBTI) degradation models which are responsible for p-MOSFET energy degradation. Hence, we propose a unified theory on the recent models in order to predict the transistor aging by considering the energy effect. Development of the newly modified model in this article is followed by a reassesment on NBTI models considering energy degradation. Unlike many of the previous models, the proposed theory of NBTI degradation projects the reliability in both stress and recovery phase; which follows power law.