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The influence of annealing conditions on the efficiency of phosphorous gettering in CZ-Si for solar cell applications

机译:退火条件对用于太阳能电池的CZ-Si中磷吸杂剂效率的影响

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The effect of the annealing ambient on the efficiency of the phosphorous gettering process for Czochralski (CZ) silicon waters is investigated in this paper. Phosphorous is diffused from a POCl_3 source at different temperatures into single-crystal p-tyupe silicon wafers having a resistivity of around 1 ohm/cm. This is followed by an additional heat treatment in either oxidizing (wet and dry oxide) ro in inert (argon) ambient. The laser microwave photoconductivity decay method is used to monitor the changes in the mionority carrier lifetime after the phosphorous diffusion and the subsequent annealing. Furthermore, solar cells are fabricated on the treated samples in order to corelate the lifetime measuremnts with the illuminated I-V characteristics of the cells.
机译:本文研究了退火环境对切克劳斯基(CZ)硅水磷吸杂过程效率的影响。磷从POCl_3源以不同的温度扩散到电阻率约为1 ohm / cm的单晶p型硅晶片中。随后在惰性(氩气)环境中在氧化(湿式和干式氧化物)中进行额外的热处理。激光微波光电导衰减法用于监测磷扩散和随后的退火后,离子载流子寿命的变化。此外,在处理过的样品上制造太阳能电池,以使寿命测量值与电池的照明I-V特性相互关联。

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