Photoluminescence Properties of Porous Silicon Based on FZ(H) Si Wafer

摘要

The photoluminescence (PL) properties of porous silicon (PS) have been studied based on n-type single -crys- tal (111) silicon wafers (80-90 Ω·cm in the resistivity). The porous silicon layers (PSL) were created by anodizing the wafers with a denuded zone of 20-40 um formed by neutron transmutation doping (NTD) and thermal treatment at 940℃ for 4H and then 700℃ for 2 h, two-step heating of the floating -zone silicon (FZ SI) GROWN IN A HYDROGEN (H_2) ambience. By surface modification with stannic chloride or amine immersion and rapid thermal oxidation (RTO), the PL peak po- sition from the PS can be qualitatively controlled factitiously.