IMPACT OF PENETRATING RADIATION ON CURRENT FLOW DISTRIBUTION STABILITY IN POWERFUL HIGH-FREQUENCY AND MICROWAVE TRANSISTORS

摘要

The paper presents the results of experimental studies of γ-radiation impact on thermal parameters and stability of current distribution in power bipolar HF and microwave transistors. The improved immunity of the transistors to the constricted discharge of current is explained. The kinetics of restoration of electric and thermal parameters in the process of annealing is considered.