SEMICONDUCTOR DETECTOR AS IONISING RADIATION DOSIMETER

摘要

There are presented the results of processing of γ-irradiation power detector, which possesses high stabilitiy of working parameters. The possibility of its application as a radiation intensimeter and as an absorbed dose dosimeter simultaneously is also discussed. It has been showen that the obtained high stability of parameters of p-Si < Ir > (the concentration and the life-time of carriers) influenced by doping with Ir allows to use the detectors as a dosimeter of high absorbed doses of ionizing radiation. The ways of rising of the lower limit of dosimeters sensibility to biological absorbed dose are discussed as well. The concrete solution of this problem is suggested.