Influence of spatially inhomogeneous gain saturation, caused by a standing wave, on the amplitude- frequency modulation cha- racteristic of semiconductor laser radiation

摘要

The framework of linearised laser equations for the field and charge carriers is used to obtain an analytic expression which describes the modulation response function of a semiconductor laser and takes account of spatially inhomogeneous gain saturation caused by a standing wave. Account is also taken of spatial variations of the carrier density along the cavity axis, which appear because of different rates of stimulated recombination near the standing-wave nodes and antinodes, and because of 'expulsion' of free carriers from the wave antinodes by electrostriction forces.