Some effects of pulse irradiation on semiconductor devices

摘要

The effects of pulse irradiation upon majority and minority carrier properties of semiconductor devices are presented, with emphasis on those effects peculiar to radiation rates of the orderof 1016 neutrons/cm2 per second and 107 röntgens (¿)/sec. Experimental data and semiconductor theory are employed to obtain expression for the dependence of device parameters on integrated neutron exposure in germanium and silicon. Comparisons are made of the effects produced by neutrons and ¿-rays. Experimental data for the transient photo-voltaic effect observed in junction devices under pulse irradiation are discussed on the basis of current theory.