ns and GaN HEMTnns are regarded as successors of Si devices in medium-to-high-voltage ('/>
机译:基于SiC MOSFET和GaN HEMT的高效大功率密度7.2 kW EV电池充电器的比较
Kettering University, 1700 University Ave, USA;
Kettering University, 1700 University Ave, USA;
University of Tennessee, USA;
University of Tennessee, USA;
Hella Corporate Center USA Inc., USA;
Hella Corporate Center USA Inc., USA;
switching convertors; battery chargers; matrix convertors; III-V semiconductors; power factor correction; gallium compounds; silicon compounds; battery powered vehicles; wide band gap semiconductors; electric vehicle charging; MOS integrated circuits; HEMT integrate;
机译:基于可变直流总线控制的基于碳化硅MOSFET的三相10 kW双向EV充电器的功率损耗分析和效率最大化
机译:高温硬件:开发10 kW高温,高功率密度三相AC-DC-AC SiC转换器
机译:用于电动汽车的1MHz高效高功率密度双向GaN基CLLC转换器的设计
机译:基于SiC MOSFET和GaN HEMT的高效高功率密度7.2kW EV电池充电器的比较
机译:用于高功率密度应用的SiC功率器件的电气集成
机译:Algan / GaN在没有GaN缓冲层的SIC器件上:电气和噪声特性
机译:Nevs(邻里电动车)1.5 kW低成本电池充电器的开发研究