Many pulsed power applications require short high-voltage pulses with a high-repetition rate. Conventional high-voltage discharge pulse-switches such as thyratrons, spark gap switches, and vacuum tube switches have a short lifetime, whereas the semiconductor switches have a long lifetime and high reliability. The semiconductor switches, however cannot be directly applied to fast high-voltage pulsed power generation due to their limited operating voltage ratings despite their relatively long switching times. Therefore, they are used with voltage amplification and a pulse compression stage. This paper describes two pulse generators that use the semi-conductor switches and nonlinear capacitors: one is based on an opening switch (IGBT) and inductive energy storage, the other is a combination of a closing switch (RSD) and capacitive energy storage.
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