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Overview of Self-Magnetically Pinched-Diode Investigations on RITS-6

机译:RITS-6上的自磁捏二极管研究概述

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摘要

The electron-beam-driven self-magnetically pinched diode is a candidate for future flash X-ray radiographic sources. As presently fielded on Sandia Laboratories' six-cavity Radiographic Integrated Test Stand (RITS-6), the diode is capable of producing sub 3-mm radiation spot sizes and greater than 350 rads of hard X-rays at 1 m. The diode operates between 6 and 7 MV with a slowly decreasing impedance that falls from approximately 65 to 40 $Omega$ during the main pulse. Sensitivity in diode operation is affected by the interaction of evolving plasmas from the cathode and anode, which seem to limit stable diode operation to a narrow parameter regime. To better quantify the diode physics, high-resolution time-resolved diagnostics have been utilized which include plasma spectroscopy, fast-gated imaging, X-ray p-i-n diodes, X-ray spot size, and diode and accelerator current measurements. Data from these diagnostics are also used to benchmark particle-in-cell simulations. An overview of results from experiments and simulations is presented.
机译:电子束驱动的自磁收缩二极管是未来X射线X射线照相放射源的候选者。如目前在桑迪亚实验室的六腔射线照相综合测试台(RITS-6)上使用的那样,该二极管能够产生小于3毫米的辐射光斑大小,并在1 m处产生大于350 rad的硬X射线。二极管工作在6到7 MV之间,阻抗逐渐减小,在主脉冲期间阻抗从大约65Ω下降到40Ω。二极管工作时的灵敏度受到阴极和阳极不断发展的等离子体相互作用的影响,这似乎将稳定的二极管工作限制在一个狭窄的参数范围内。为了更好地量化二极管的物理特性,已使用了高分辨率的时间分辨诊断程序,其中包括等离子体光谱,快速门成像,X射线p-i-n二极管,X射线光点大小以及二极管和加速器电流测量。来自这些诊断程序的数据也用于基准粒子内模拟。给出了实验和模拟结果的概述。

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