首页> 外文期刊>Plasma Science, IEEE Transactions on >Improvement of Surface Flashover Performance in Vacuum of A-B-A Insulator by Adopting ZnO Varistor Ceramics as Layer A
【24h】

Improvement of Surface Flashover Performance in Vacuum of A-B-A Insulator by Adopting ZnO Varistor Ceramics as Layer A

机译:通过使用ZnO压敏电阻陶瓷作为A层来提高A-B-A绝缘子在真空中的表面闪络性能

获取原文

摘要

In this paper, a new insulation system of ZnO varistor ceramic–$ hbox{Al}_{2}hbox{O}_{3}$ ceramic-ZnO varistor ceramic insulators (defined as A-B-A insulators) is proposed to improve surface flashover performance in vacuum so that it is possible to reduce the electric field at the vacuum-insulator-cathode triple junction (CTJ) by changing the conductivity and permittivity of the ZnO varistor ceramic layer of the A-B-A insulators. Then, the influences of the conductivity and permittivity of ZnO varistor ceramics on the dc and impulse surface flashover voltage in vacuum were experimentally investigated, respectively. It was found that the dc surface flashover voltage of the samples increases greatly with a decrease of the dc conductivity of the ZnO varistor ceramic layer and is improved by 81% compared with the $hbox{Al}_{2}hbox{O}_{3}$ ceramic sample. It is attributed to the decrease of the electric field at the vacuum-layer A-CTJ caused by the conductivity of layer A larger than that of layer B and, furthermore, by the nonlinear current–voltage characteristics of layer A, i.e., ZnO varistor ceramics. Additionally, the impulse surface flashover voltage first increases and then decreases with a decrease of the permittivity of the ZnO varistor ceramic layer and is increased by 136%. It is explained by the decrease of the electric field at the triple junction by the permittivity of layer A larger than that of layer B and, furthermore, by the nonlinear current–voltage characteristics of layer A. These results demonstrate the insulation system of the ZnO varistor ceramic–$hbox{Al}_{2}hbox{O}_{3}$ ceramic-ZnO varistor ceramic insulators as an effective way to improve surface flashover performance in vacuum.
机译:本文提出了一种新的ZnO压敏电阻陶瓷绝缘系统– $ hbox {Al} _ {2} hbox {O} _ {3} $陶瓷-ZnO压敏电阻陶瓷绝缘子(定义为ABA绝缘子),以提高表面闪络性能通过改变ABA绝缘子的ZnO压敏电阻陶瓷层的电导率和介电常数,可以减小真空-绝缘体-阴极三结(CTJ)处的电场。然后,分别实验研究了ZnO压敏电阻陶瓷的电导率和介电常数对真空中dc和脉冲表面闪络电压的影响。发现样品的直流表面闪络电压随ZnO压敏电阻陶瓷层直流电导率的降低而大大增加,与$ hbox {Al} _ {2} hbox {O} _相比,提高了81%。 {3} $陶瓷样品。这是由于A层的电导率大于B层的电导率,以及A层的非线性电流-电压特性(即ZnO压敏电阻)引起的真空层A-CTJ电场的减小陶瓷。另外,随着ZnO压敏电阻陶瓷层的介电常数的减小,脉冲表面闪络电压首先增大,然后减小,并且增大了136%。这可以通过以下方式解释:三层结处的电场减小,这是由于A层的介电常数大于B层的介电常数,以及A层的非线性电流-电压特性所致。这些结果证明了ZnO的绝缘系统压敏电阻陶瓷-$ hbox {Al} _ {2} hbox {O} _ {3} $陶瓷-ZnO压敏电阻陶瓷绝缘子是提高真空中表面闪络性能的有效方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号