GaN Switches in Pulsed Power: A Comparative Study

摘要

Present research in widebandgap semiconductors is concentrated predominantly in continuous-wave applications. While their applicability for pulsed power is recognized, little work has been done in taking advantage of the individual characteristics, such as the large drift velocities, of the candidate materials. Analysis of the relative merits of the key semiconductor technologies—Si, GaAs, SiC, and GaN—in the pulsed-power regime is presented, including limitations associated with majority carrier operation and thermal transients. We will also discuss a GaN photoconductor with a vertical topology, which is particularly well suited to higher current applications and also is geometrically more applicable for integration to transmission lines without degrading the high blocking field (2 MV/cm) now available. The relation between the blocking voltage and conduction current typical of majority carrier operation is analyzed and we will show how optical carrier generation provides the much higher switching power associated with bipolar operation.